Over the past few weeks, we’ve explored updates comparing the performance of the latest Charge-Coupled Device (CCD) and Complementary Metal-Oxide-Semiconductor (CMOS) industrial image sensors. For those who might have missed previous discussions here’s a recap with links:

[1] CCD vs. CMOS – Modulation Transfer Function in NIR

A comparison of how CCD and CMOS sensors handle modulation transfer function (MTF) performance in the near-infrared (NIR) spectrum, highlighting key differences.

[2] CCD versus CMOS blooming and smear

An analysis of blooming (overflow of light charges) and smear artifacts in both sensor types under various conditions.

[3] CCD versus CMOS in global security systems

How the choice between CCD or CMOS impacts performance in global security applications, such as surveillance systems.

[4] What can you do with 4 electrons of read noise now from a CMOS industrial camera – half of that of a CCD?

CMOS sensors have achieved lower read noise levels (e.g., 4 electrons) compared to traditional CCDs, offering improved sensitivity and image quality in applications requiring minimal signal interference.

[5] CCD vs. CMOS sensitivity in low light improvements with industrial CMOS image sensors and cameras

A deep dive into how recent advancements in CMOS technology enhance sensitivity performance in low-light environments, challenging the traditional dominance of CCDs.

Last Updated: 2025-09-04 20:31:17